Sunday, 11 December 2016

mosfet - Wide Swing Cascode Current Mirror Biasing Difficulties


I'm working on designing a cascode current mirror, depicted below:


Schematic for circuit in question


Constraints: all Von needs to be above 200 mV, all Vds neds to be at least double Von, L is 0.35 um.


Derived from the SPICE file, k' = 181.47 uA/V^2, and the given bias current is 25 uA. Rearranging the equation for Von to solve for W gives:


$$ W=(2I_{D}L)/(k'(V_{ON})^2) $$


I input my given values and find a value for W of 2.41 um. To make them have a slightly happier ratio, I bump that down to 2.3625 um, which makes W/L 6.75.


I then make all of my Ws that value, run a bias simulation, and investigate; this is what I find. All voltages are in mV (I apologize, there seems to be no way to make a table):


MOS - Vgs - Vth - Von - Vds - Region


M1 --- 776 - 585 - 191 - 3000 - Saturation



M2 --- 776 - 558 - 218 - 776 - Saturation


M3 --- 905 - 585 - 320 - 152 - Triode


M4 --- 905 - 585 - 320 - 2850 - Saturation


M5 --- 776 - 582 - 194 - 102 - Triode


M6 --- 803 - 587 - 216 - 803 - Saturation


M7 --- 905 - 582 - 323 - 102 - Triode


M8 --- 803 - 587 - 216 - 803 - Saturation


Ignoring for a moment M1 and M4, why are M3, M5, and M7 in triode? I've tried changing the W up and down, and I can't get any of those Vds values to go above 200, let alone 400 mV. How do I set my Vds higher? What's wrong with the Von of M3, M4, and M7?



Answer



@τεκ Thank you for helping to correct my false assumption.



From Analysis and Design of Analog Integrated Circuits, Gray et. al, 4th Ed., pp. 270-271 (emphasis added):



In a single combined input branch, some element must provide a voltage drop equal to the desired difference between the gate voltages of M1 and M2...This voltage difference can be developed across the drain to the source of a transistor deliberately operated in the triode region...Since M6 is diode connected, it operates in the active region as long as the input current and threshold are positive. However, since the gate-source voltage of M6 is equal to the gate-drain voltage of M5, a channel exists at the drain of M5 when it exists at the source of M6. In other words, M6 forces M5 to operate in the triode region.



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