While thinking of ways to protect a MOSFET one idea was to put an extremely high resistance in front of the gate: The idea being that current is never supposed to flow through the gate, so if some transient threatened the gate, the resistance would limit that current, possibly preventing the FET from burning out.
In fact, while researching MOSFET protection I came across this integrally protected product that includes in its features "internal series gate resistance," as shown on its diagram:
If this idea is correct, then the question is: Why not always put a megaohm resistor before the gate of any FET?
Or is there a practical reason that a gate resistor would not typically protect the FET? Or could it even have any adverse performance effects?
No comments:
Post a Comment