This is what I know about NPN BJTs (Bipolar Junction Transistors):
- The Base-Emitter current is amplified HFE times at Collector-Emitter, so that
Ice = Ibe * HFE
Vbe
is the voltage between Base-Emitter, and, like any diode, is usually around 0,65V. I don't remember aboutVec
, though.- If
Vbe
is lower than the minimum threshold, then the transistor is open and no current passes through any of its contacts. (okay, maybe a few µA of leak current, but that's not relevant)
But I still have some questions:
- How the transistor works when it is saturated?
- Is it possible to have the transistor in open state, under some condition other than having
Vbe
lower than the threshold?
In addition, feel free to point (in answers) any mistakes I made in this question.
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