There are many "process technologies" that exist to fabricate circuits on silicon. They are mainly differentiated based on size of some feature. Here is the list of them:
10 µm – 1971
3 µm – 1975
1.5 µm – 1982
1 µm – 1985
800 nm – 1989
600 nm – 1994
350 nm – 1995
250 nm – 1997
180 nm – 1999
130 nm – 2002
90 nm – 2004
65 nm – 2006
45 nm – 2008
32 nm – 2010
22 nm – 2012
14 nm – 2014
10 nm – est. 2015
7 nm – est. 2017
5 nm – est. 2019
What I wish to know is, what precisely do these numbers refer to e.g the 90nm that was reached in 2004, what does it precisely mean?
I think it has to do with some dimension of the transistor that is fabricated but do not know the details. So what does it mean?
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