I'm stuck with this doping problem and can't figure out where to go with it.
The built-in voltage of a GaAs pn junction diode is 1.25 V when the diode's temperature is T = 320K. The cathode region of the diode is doped with phosphorus at a concentration of 1e17 $cm^{-3}$. Determine the required doping concentration in the anode region.
Would I go about this by using the equation $V_{bi} = V_T\cdot ln(N_a\cdot\frac{N_d}{n_i^2})$?
$V_T$ being the thermal voltage
$N_a$ being the acceptor concentration on p side
$N_d$ being the donor concentration on the n side
$n_i$ being the intrinsic carrier concentration
I have completed the following work for the above question. Can I be checked for accuracy please!
Answer
That is the correct formulae for an abrupt junction, just be sure to use the right temperature for the thermal voltage $ V_T=\dfrac{KT}{q_e}$ and the right intrinsic carrier concentration $n_i$ at that temperature.
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