Is operating point calculation the same for P-JFET and N-JFET with voltage-divider bias?

I've seen this calculation of operating point for N-JFET:

Together with the relation \$I_D = I_{DSS}(1-V_{GS}/U_P)^2\$, it is possible to find \$I_D\$ and \$V_{SD}\$.

This method doesn't take into account that it's a N-JFET. Does this mean that the result would be identical for a P-JFET? (I think it is, because we assume that there is no current through the gate, so P/N-ness wouldn't matter.)

Answer

I reckon so: -

Taken from here